This is the hall of fame for achievements related to the “ISSCC” or “Walden” FOM defined as:
It will list current and previous world record holders according to my ADC survey. Current state-of-the-art is found at the top of the list. For more about different figures of merit, check out the “Generic FOM classes” page. An overview of current state-of-the-art for more than one type of FOM is found on the FOM-o-meter page.
|2.2||Feb 2013||SAR||P. Harpe, E. Cantatore, and A. van Roermund||Eindhoven University of Technology, The Netherlands|||
|2.8||Sept 2012||SAR||P. Harpe, G. Dolmans, K. Philips, and H. de Groot||Holst Centre and Eindhoven University of Technology, The Netherlands|||
|3.2||June 2012||SAR||H.-Y. Tai, H.-W. Chen, and H.-S. Chen||National Taiwan University, Taipei, Taiwan|||
|4.4||Feb 2008||SAR||M. van Elzakker, E. van Tuijl, P. Geraedts, D. Schinkel, E. Klumperink, and B. Nauta||University of Twente, Enschede, Netherlands; Philips Research, Eindhoven, Netherlands; Axiom IC, Enschede, Netherlands|||
- P. Harpe, E. Cantatore, and A. van Roermund, “A 2.2/2.7fJ/conversion-step 10/12b 40kS/s SAR ADC with Data-Driven Noise Reduction,” Proc. of IEEE Solid-State Circ. Conf. (ISSCC), San Francisco, USA, pp. 270–271, Feb., 2013.
- P. Harpe, G. Dolmans, K. Philips, and H. de Groot, “A 0.7V 7-to-10bit 0-to-2MS/s Flexible SAR ADC for Ultra Low-Power Wireless Sensor Nodes,” Proc. of Eur. Solid-State Circ. Conf. (ESSCIRC), Bordeaux, France, pp. 373–376, Sept., 2012.
- H.-Y. Tai, H.-W. Chen, and H.-S. Chen, “A 3.2fJ/c.-s. 0.35V 10b 100KS/s SAR ADC in 90nm CMOS,” Symp. VLSI Circ. Digest of Technical Papers, Honolulu, USA, pp. 92–93, June, 2012.
- M. van Elzakker, E. van Tuijl, P. Geraedts, D. Schinkel, E. Klumperink, and B. Nauta, “A 1.9μW 4.4fJ/Conversion-step 10b 1MS/s charge-redistribution ADC,” Proc. of IEEE Solid-State Circ. Conf. (ISSCC), San Francisco, California, pp. 244–245, Feb., 2008.