POWER EFFICIENCY TRENDS: A series of blog posts on A/D-converter performance trends would not be complete without an analysis of figure-of-merit (FOM) trends, would it? We will therefore take a look at the two most commonly used FOM, starting with the by far most popular:
where P is the power dissipation, fs is Nyquist sampling rate, and ENOB is the effective number of bits defined by the signal-to-noise and-distortion ratio (SNDR) as:
FA1 is sometimes referred to as the Walden or ISSCC FOM and relates the ADC power dissipation to its performance, represented by sampling rate and conversion error amplitude. The best reported FA1 value each year has been plotted for delta-sigma modulators (DSM) and Nyquist ADCs in Fig. 1. Trajectories for state-of-the-art have been indicated, and trends have been fitted to these state-of-the-art data points. The average improvement trend for all ADCs (2×/2.6 years) is included for comparison.
By dividing the data into DSM and Nyquist subsets, it is seen that delta-sigma modulators have improved their state-of-the-art FOM at an almost constant rate of 2×/2.5 years throughout the existence of the field – just slightly faster than the overall average. State-of-the-art Nyquist ADCs have followed a steeper and more S-shaped evolution path. Their overall trend fits to a 2× improvement every 1.8 years, although it is obvious that evolution rates have changed significantly over time. A more accurate analysis of Nyquist ADC trends should probably make individual fits of the early days glory, the intermediate slowdown, and the recent acceleration phase. This was done in  where evolution was analyzed with DSM and Nyquist data merged. However, for simplicity I’ll just stick to the more conservative overall Nyquist trend. [I wouldn’t want anyone to suggest that I’m producing “subjective” or “highly speculative” trend estimates, would I? 😉 ]
Still, if anyone is curious to know … 🙂 … the state-of-the-art data points fit to a 2×/14 months trend between 2000 and 2010. That’s actually faster than Moore’s Law, which is traditionally attributed a 2×/18 months rate -. A new twist on “More than Moore”, perhaps? Even the more conservative overall 2×/21 months trend is close enough to conclude that the state-of-the-art FOM for Nyquist ADCs has developed exponentially in a fashion closely resembling Moore’s Law. And that’s got to be an impressive trend for any analog/mixed circuit performance parameter.
Irrespective of what’s the best fit to data, it should be evident from Fig. 1 that Nyquist ADCs broke away from the overall trend around year 2000, and has since followed a steeper descent in their figures-of-merit. They have also reached further (4.4 fJ)  than DSM (35.6 fJ) . The overall trend projects to a 0.2 fJ ADC FOM in 2020. Whether or not that’s possible, we’ll leave for another post. A deeper look at the data also reveals that:
- The acceleration in state-of-the-art is almost completely defined by successive-approximation (SAR) ADCs , -, accompanied by a single cyclic ADC . The superior energy efficiency of the SAR architecture was empirically shown in .
- A significant part of the acceleration can be explained by the increased tendency to leave out, for example I/O power dissipation when reporting experimental results – a trend also observed by Bult . The FOM in the graph was intentionally calculated from the on-chip rather than total power dissipation because: (a) ADCs are increasingly used as a system-on-chip (SoC) building block, which makes the stand-alone I/O power for a prototype irrelevant, and (b) Many authors don’t even report the I/O power anymore.
- FA1 has a bias towards low-power, medium resolution designs rather than high-resolution, and thus benefits from CMOS technology scaling as shown in ,. An analysis of the underlying data shows that, for the best FA1 every year, the trajectories for ENOB and P follows distinct paths towards consistently lower power and medium resolution. You simply gain more in FA1 by lowering power dissipation than by increasing resolution because (1) does not correctly describe the empirically observed power-resolution tradeoff for ADCs ,.
In order to compare high-resolution ADCs limited by thermal noise, it has therefore been proposed to use a slightly different FOM, sometimes labeled the “Thermal FOM” -,
This figure-of-merit will be the topic of the next post.
See also …
Walden’s survey 
- B. E. Jonsson, “A survey of A/D-converter performance evolution,” Proc. of IEEE Int. Conf. Electronics Circ. Syst. (ICECS), Athens, Greece, pp. 768–771, Dec., 2010.
- G.E. Moore, “Cramming more components onto integrated circuits,” Electronics, Vol. 38, No. 8, Apr. 1965.
- G. E. Moore, “No exponential is forever: but “forever” can be delayed!,” IEEE ISSCC, Dig. Tech. Papers, San Francisco, CA, Feb. 2003, pp. 20–23.
- M. van Elzakker, E. van Tuijl, P. Geraedts, D. Schinkel, E. Klumperink, and B. Nauta, “A 1.9μW 4.4fJ/Conversion-step 10b 1MS/s Charge-Redistribution ADC,” Proc. of IEEE Solid-State Circ. Conf. (ISSCC), San Francisco, California, pp. 244–245, Feb., 2008.
- J. Xu, X. Wu, M. Zhao, R. Fan, H. Wang, X. Ma, and B. Liu, “Ultra Low-FOM High-Precision ΔΣ Modulators with Fully-Clocked SO and Zero Static Power Quantizers,” Proc. of IEEE Custom Integrated Circ. Conf. (CICC), San Jose, California, USA, pp. 1–4, Sept., 2011.
- A. Shikata, R. Sekimoto, T. Kuroda, and H. Ishikuro, “A 0.5 V 1.1 MS/sec 6.3 fJ/Conversion-Step SAR-ADC With Tri-Level Comparator in 40 nm CMOS,” IEEE J. Solid-State Circuits, Vol. 47, pp. 1022–1030, Apr., 2012.
- T.-C. Lu, L.-D. Van, C.-S. Lin, C.-M. Huang, “A 0.5V 1KS/s 2.5nW 8.52-ENOB 6.8fJ/Conversion-Step SAR ADC for Biomedical Applications,” Proc. of IEEE Custom Integrated Circ. Conf. (CICC), San Jose, California, USA, pp. 1–4, Sept., 2011.
- S.-K. Lee, S.-J. Park, Y. Suh, H.-J. Park, and J.-Y. Sim, “A 1.3µW 0.6V 8.7-ENOB Successive Approximation ADC in a 0.18µm CMOS,” Symp. VLSI Circ. Digest of Technical Papers, Honolulu, USA, pp. 242–243, June, 2009.
- H.-C. Hong, and G.-M. Lee, “A 65-fJ/Conversion-Step 0.9-V 200-kS/s Rail-to-Rail 8-bit Successive Approximation ADC,” IEEE J. Solid-State Circuits, Vol. 42, pp. 2161–2168, Oct., 2007.
- M. D. Scott, B. E. Boser, and K. S. J. Pister, “An Ultra-Low Power ADC for Distributed Sensor Networks,” Proc. of Eur. Solid-State Circ. Conf. (ESSCIRC), Firenze, Italy, pp. 255–258, Sept., 2002.
- M. D. Scott, B. E. Boser, and K. S. J. Pister, “An Ultralow-Energy ADC for Smart Dust,” IEEE J. Solid-State Circuits, Vol. 38, pp. 1123–1129, July, 2003.
- D. Muthers, and R. Tiekert, “A 0.11mm2 low-power A/D-converter cell for 10b 10MS/s operation,” Proc. of Eur. Solid-State Circ. Conf. (ESSCIRC), Leuven, Belgium, pp. 251–254, Sept., 2004.
- B. E. Jonsson, “An empirical approach to finding energy efficient ADC architectures,” Proc. of 2011 IMEKO IWADC & IEEE ADC Forum, Orvieto, Italy, pp. 1–6, June 2011. [PDF @ IMEKO]
- K. Bult, “Embedded analog-to-digital converters,” Proc. of Eur. Solid-State Circ. Conf. (ESSCIRC), Athens, Greece, pp. 52–60, Sept., 2009.
- B. E. Jonsson, “Using Figures-of-Merit to Evaluate Measured A/D-Converter Performance,” Proc. of 2011 IMEKO IWADC & IEEE ADC Forum, Orvieto, Italy, pp. 1–6, June 2011. [PDF @ IMEKO]
- B. E. Jonsson, “On CMOS scaling and A/D-converter performance,” Proc. of NORCHIP, Tampere, Finland, Nov. 2010.
- A. M. A. Ali, C. Dillon, R. Sneed, A. S. Morgan, S. Bardsley, J. Kornblum, and L. Wu, “A 14-bit 125 MS/s IF/RF sampling pipelined ADC with 100 dB SFDR and 50 fs jitter,” IEEE J. Solid-State Circuits, Vol. 41, pp. 1846–1855, Aug, 2006.
- C. Wulff, and T. Ytterdal, “Design of a 7-bit, 200MS/s, 2mW pipelined ADC with switched open-loop amplifiers in a 65nm CMOS technology,” Proc. of NORCHIP, Aalborg, Denmark, Nov., 2007.
- R. Walden, “Analog-to-digital conversion in the early twenty-first century,” Wiley Encyclopedia of Computer Science and Engineering, pp. 126–138, Wiley, 2008.